1 p-channel 100 v (d-s) mosfet features ? halogen-free acc ording to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? p ower switch ? dc/dc converters prod uc t summary v ds (v) r ds(on) ( )i d (a ) q g (t yp.) - 100 0.195 at v gs = - 10 v - 19 11.7 0.210 at v gs = - 4.5 v - 17 t o-252 s gd t op v iew drain connected to tab s g d p-channel mosfet notes: a. duty cycle 1 % . b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). absolute maximum ratings t c = 25 c, unless otherwise noted p a rameter symbol li mit uni t dr ain-source voltage v ds - 100 v gat e -source voltage v gs 20 continuous d rain current (t j = 150 c ) t c = 25 c i d - 19 a t c = 70 c - 12.1 pulsed dr ain current i dm - 45 a v alanche current i as - 18 single a v alanche energy a l = 0.1 mh e as 16.2 m j maximum power dissipation a t c = 25 c p d 32.1 b w t a = 25 c c 2.5 ope r ating junction and storage temperature range t j , t stg - 55 to 1 5 0 c thermal resist ance ratings p a rameter symbol li mit unit junction-to-ambient (pcb mount) c r th j a 50 c / w junction-to-case (drain) r th jc 3.9 DTU19P10 www.din-tek.jp
2 no tes: a. p ulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. indep endent of ope rating temperature. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arame ter symb ol test conditions min. typ. max. un it static drain-source breakdo wn voltage v ds v ds = 0 v , i d = - 250 a - 100 v gate t hreshold voltage v gs( th) v ds = v gs , i d = - 250 a - 1 - 2.5 gate-body leakage i gss v ds = 0 v , v gs = 20 v 250 na zero gate voltage drain current i dss v ds = - 1 00 v, v gs = 0 v - 1 a v ds = - 100 v , v gs = 0 v , t j = 125 c - 50 v ds = - 100 v , v gs = 0 v , t j = 150 c - 250 on-state drain current a i d( on) v ds - 10 v, v gs = - 10 v - 15 a drain-source on-state resistance a r ds( on) v gs = - 10 v , i d = - 3.6 a 0.162 0.195 v gs = - 4.5 v , i d = - 3.4 a 0.175 0.210 forward transconductance a g fs v ds = - 15 v, i d = - 3.6 a 12 s dy namic b inpu t capacitance c iss v gs = 0 v , v ds = - 50 v, f = 1 mhz 1055 pf output capacitance c oss 65 re verse transfer capacitance c rs s 41 t otal gate charge c q g v ds = - 50 v, v gs = - 10 v, i d = - 3.6 a 23.2 34.8 nc v ds = - 50 v , v gs = - 4.5 v , i d = - 3.6 a 11.7 17.6 gate-source charge c q gs 3.5 gate- drain charge c q gd 4.8 g ate resistance r g f = 1 mhz 1.2 5.7 11.5 tu r n - o n d e l ay t i m e c t d(on ) v dd = - 50 v , r l = 17.2 i d ? - 2 .9 a, v gen = - 10 v, r g = 1 71 4 ns rise time c t r 12 18 turn-off delay time c t d(off) 33 50 fall time c t f 91 8 drain -source body diode ratings and characteristics t c = 25 c b co ntinuous current i s - 1 9 a pulsed current i sm - 45 f orward voltage a v sd i f = - 2.9 a, v gs = 0 v - 0.8 - 1.5 v reverse recovery time t rr i f = - 2.9 a, di/dt = 100 a/s 5 0 75 ns peak reverse recovery current i rm( rec) - 4 - 6 a reverse recovery charge q rr 98 147 nc dt u19p10 www.din-tek.jp
3 typica l c haracteristics 25 c, unless otherwise noted outpu t characteristics transfer characteristics transconductance 0 3 6 9 12 15 012 34 v gs =1 0vt hru5v v gs =4 v v ds - drain -to-source voltage (v) - drain c urrent (a) i d v gs =3 v 0.0 0.4 0.8 1.2 1.6 2.0 012 34 t c = 25 c t c =1 2 5 c t c = - 55 c v gs - gate -to-source voltage (v) - drain current (a) i d 0 5 10 15 20 25 0 3 6 9 13 19 i d - drain current (a) - t ransconductance (s) g fs t c = 125 c t c = - 55 c t c = 25 c on -res istance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.10 0.15 0.20 0.25 0.30 0 3 6 9 13 19 v gs =4. 5v v gs =10v - on - resistance ( ) r ds (o n) i d - drain current (a) 0.00 0.15 0.30 0.45 0.60 02 4 6810 t j = 25 c t j = 150 c - on - resistance ( ) r ds (o n) v gs - gate -to-source voltage (v) 0 2 4 6 8 10 0 5 10 15 20 25 v ds =8 0v i d =3 . 6a v ds =5 0v v ds =2 5v - gate - to-source voltage (v) q g - t otal gate charge (nc) v gs dt u19p10 www.din-tek.jp
4 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s c rss 0 400 800 1200 1600 0 20406080100 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 i d =3.6a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-source voltage (v) t j - junction temperature (c) 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) dt u19p10 www.din-tek.jp www.vishay.com 4 document number: 65903 s10-0634-rev. a, 22-mar-10 vishay siliconix sud09p10-195 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s c rss 0 400 800 1200 1600 0 20406080100 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 i d =3.6a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-source voltage (v) t j - junction temperature (c) 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a)
5 typical characteristics 25 c, unless otherwise noted single pulse avalanche current capability vs. time 1 10 100 time (s) i dav (a) t j = 150 c t j = 25 c 10 -3 10 -2 10 -1 10 -4 10 -6 10 -5 safe operating area 100 1 0.1 1 10 100 0.01 19 0.1 t a = 25 c single pulse 100 ms limited by r ds(on) * bvdss limited 1ms 100 s 10 ms 1s,10s,dc v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02 dt u19p10 www.din-tek.jp vishay siliconix sud09p10-195 document number: 65903 s10-0634-rev. a, 22-mar-10 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65903 . single pulse avalanche current capability vs. time 1 10 100 time (s) i dav (a) t j = 150 c t j = 25 c 10 -3 10 -2 10 -1 10 -4 10 -6 10 -5 safe operating area 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 100 ms limited by r ds(on) * bvdss limited 1ms 100 s 10 ms 1s,10s,dc v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02
1 to-252aa case outline no te ? dimension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters i nches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note reco mmended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) application note www.din-tek.jp
1 disclaimer all pro duct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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